ds30311 rev. 4 - 2 1 of 3 DMMT3904W www.diodes.com diodes incorporated epitaxial planar die construction intrinsically matched npn pair (note 1) small surface mount package 2% matched tolerance, h fe , v ce(sat) , v be(sat) 1% matched tolerance, available (note 2) also available in lead free version features maximum ratings @ t a = 25 c unless otherwise specified mechanical data case: sot-363, molded plastic case material - ul flammability rating classification 94v-0 moisture sensitivity: level 1 per j-std-020a terminals: solderable per mil-std-202, method 208 also available in lead free plating (matte tin finish). please see ordering information, note 5, below terminal connections: see diagram marking (see page 2): k4a marking code & date code information: see page 2 weight: 0.015 grams (approx.) DMMT3904W matched npn small signal surface mount transistor characteristic symbol DMMT3904W unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 6.0 v collector current - continuous i c 200 ma power dissipation (note 3) p d 200 mw thermal resistance, junction to ambient (note 3) r ja 625 c/w operating and storage temperature range t j ,t stg -55 to +150 c notes: 1. built with adjacent die from a single wafer. 2. contact the diodes, inc. sales department. 3. device mounted on fr5 pcb: 1.0 x 0.75 x 0.62 in.; pad layout as shown on suggested pad layout document ap0 2001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 4. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 5. for lead free version (with lead free terminal finish) part number, please add "-f" suffix to part number above. example: DMMT3904W-7-f. t c u d o r p w e n device packaging shipping DMMT3904W-7 sot-363 3000/tape & reel ordering information (note 4) sot-363 dim min max a 0.10 0.30 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal f 0.30 0.40 h 1.80 2.20 j 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.25 8 all dimensions in mm a m j l d b c h k g f c 2 e 2 e 1 b 2 b 1 c 1
ds30311 rev. 4 - 2 2 of 3 DMMT3904W www.diodes.com electrical characteristics @ t a = 25 c unless otherwise specified characteristic symbol min max unit test condition off characteristics (note 6) collector-base breakdown voltage v (br)cbo 60 v i c = 10 a, i e = 0 collector-emitter breakdown voltage v (br)ceo 40 v i c = 1.0ma, i b = 0 emitter-base breakdown voltage v (br)ebo 6.0 v i e = 10 a, i c = 0 collector cutoff current i cex 50 na v ce = 30v, v eb(off) = 3.0v base cutoff current i bl 50 na v ce = 30v, v eb(off) = 3.0v on characteristics (note 6) dc current gain (note 7) h fe 40 70 100 60 30 300 i c = 100a, v ce = 1.0v i c = 1.0ma, v ce = 1.0v i c = 10ma, v ce = 1.0v i c = 50ma, v ce = 1.0v i c = 100ma, v ce = 1.0v collector-emitter saturation voltage (note 7) v ce(sat) 0.20 0.30 v i c = 10ma, i b = 1.0ma i c = 50ma, i b = 5.0ma base-emitter saturation voltage (note 7) v be(sat) 0.65 0.85 0.95 v i c = 10ma, i b = 1.0ma i c = 50ma, i b = 5.0ma small signal characteristics output capacitance c obo 4.0 pf v cb = 5.0v, f = 1.0mhz, i e = 0 input capacitance c ibo 8.0 pf v eb = 0.5v, f = 1.0mhz, i c = 0 input impedance h ie 1.0 10 k v ce = 10v, i c = 1.0ma, f = 1.0khz voltage feedback ratio h re 0.5 8 x 10 -4 small signal current gain h fe 100 400 output admittance h oe 1.0 40 s current gain-bandwidth product f t 300 mhz v ce = 20v, i c = 10ma, f = 100mhz noise figure nf 5.0 db v ce = 5.0v, i c = 100 a, r s = 1.0k f = 1.0khz switching characteristics delay time t d 35 ns v cc = 3.0v, i c = 10ma, v be(off) = -0.5v, i b1 = 1.0ma rise time t r 35 ns storage time t s 200 ns v cc = 3.0v, i c = 10ma, i b1 = i b2 = 1.0ma fall time t f 50 ns notes: 6. short duration test pulse used to minimize self-heating effect. 7. the dc current gain, h fe , (matched at i c = 10ma and v ce = 1.0v) collector emitter saturation voltage, v ce(sat) , and base emitter saturation voltage, v be(sat) are matched with typical matched tolerances of 1% and maximum of 2%. t c u d o r p w e n month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd date code key kjg = product type marking code ym = date code marking y = year ex: n = 2002 m = month ex: 9 = september k4a ym marking information year 2002 2003 2004 2005 2006 2007 2008 code npr s t uv
ds30311 rev. 4 - 2 3 of 3 DMMT3904W www.diodes.com t c u d o r p w e n 0.1 1 10 0.1 1 10 100 1000 v , base-emitter (v) be(sat) saturation voltage i , collector current (ma) c fig. 5, typical base-emitter saturation volta g e vs. collector current i c i b =10 0.01 0.1 1 0.1 1 10 100 1000 v , collector-emitter (v) ce(sat) saturation voltage i , collector current (ma) c fig. 4, typical collector-emitter saturation volta g e vs. collector current i c i b =10 1 10 1000 100 0.1 1 10 1000 100 h , dc current gain fe i , collector current (ma) c fig. 3, typical dc current gain vs collector current t = -25c a t = +25c a t = 125c a v = 1.0v ce 0 5 1 5 10 0.1 1 10 100 c , input capacitance (pf) ibo c , output capacitance (pf) obo v , collector-base voltage (v) cb fig. 2, input and output capacitance vs. collector-base volta g e cibo cobo f=1mhz 0 50 25 50 75 100 125 150 175 200 p , power dissipation (mw) d t , ambient temperature (c) a fig. 1, max power dissipation vs ambient tem p erature 100 150 200 0
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